Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.

Hui Zhang; Yulong Zhang; Sumio Hosaka; You Yin

doi:doi:10.11648/j.nano.20130101.13

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Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.

Hui Zhang, Yulong Zhang, Sumio Hosaka, You Yin

Published in American Journal of Nanoscience and Nanotechnology (Volume 1, Issue 1)

Received: 6 May 2013 Published: 30 May 2013

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Abstract

We have calculated the electron energy deposition distribution in Calixarene negative resist and analyzed the development profile in order to improve the resolution of pattern. From the trajectories and energy deposition distribution in resist at various beam diameters, it is obvious that the thinner resist film should be adopted for formation of very fine dots. The analysis of relationship between the thickness of resist and dot diameter based on the critical energy densities shows that the thickness of resist less than 20 nm can obtain 5-nm size dot pattern at the range of critial energy of 6.25 keV/cm3-56.25 keV/cm3. The simulation of resist development profile indicates that dot size of 3 nm can even be obtained at a higher critical energy density at 156.25 keV/ cm3. Furthermore, Calixarene resist is more suitable than PMMA positive resist by comparison of these two resists

Published in	American Journal of Nanoscience and Nanotechnology (Volume 1, Issue 1)
DOI	10.11648/j.nano.20130101.13
Page(s)	11-16
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2013. Published by Science Publishing Group

Keywords

Electron Beam Lithography, Gaussian Beam, Monte Carlo Simulation, Energy Deposition Distribution, Resist Profile

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APA Style

Hui Zhang, Yulong Zhang, Sumio Hosaka, You Yin. (2013). Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.. American Journal of Nano Research and Applications, 1(1), 11-16. https://doi.org/10.11648/j.nano.20130101.13

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ACS Style

Hui Zhang; Yulong Zhang; Sumio Hosaka; You Yin. Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.. Am. J. Nano Res. Appl. 2013, 1(1), 11-16. doi: 10.11648/j.nano.20130101.13

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AMA Style

Hui Zhang, Yulong Zhang, Sumio Hosaka, You Yin. Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.. Am J Nano Res Appl. 2013;1(1):11-16. doi: 10.11648/j.nano.20130101.13

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@article{10.11648/j.nano.20130101.13,
  author = {Hui Zhang and Yulong Zhang and Sumio Hosaka and You Yin},
  title = {Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.},
  journal = {American Journal of Nano Research and Applications},
  volume = {1},
  number = {1},
  pages = {11-16},
  doi = {10.11648/j.nano.20130101.13},
  url = {https://doi.org/10.11648/j.nano.20130101.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20130101.13},
  abstract = {We have calculated the electron energy deposition distribution in Calixarene negative resist and analyzed the development profile in order to improve the resolution of pattern. From the trajectories and energy deposition distribution in resist at various beam diameters, it is obvious that the thinner resist film should be adopted for formation of very fine dots. The analysis of relationship between the thickness of resist and dot diameter based on the critical energy densities shows that the thickness of resist less than 20 nm can obtain 5-nm size dot pattern at the range of critial energy of 6.25 keV/cm3-56.25 keV/cm3. The simulation of resist development profile indicates that dot size of 3 nm can even be obtained at a higher critical energy density at 156.25 keV/ cm3. Furthermore, Calixarene resist is more suitable than PMMA positive resist by comparison of these two resists},
 year = {2013}
}

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TY  - JOUR
T1  - Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.
AU  - Hui Zhang
AU  - Yulong Zhang
AU  - Sumio Hosaka
AU  - You Yin
Y1  - 2013/05/30
PY  - 2013
N1  - https://doi.org/10.11648/j.nano.20130101.13
DO  - 10.11648/j.nano.20130101.13
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 11
EP  - 16
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20130101.13
AB  - We have calculated the electron energy deposition distribution in Calixarene negative resist and analyzed the development profile in order to improve the resolution of pattern. From the trajectories and energy deposition distribution in resist at various beam diameters, it is obvious that the thinner resist film should be adopted for formation of very fine dots. The analysis of relationship between the thickness of resist and dot diameter based on the critical energy densities shows that the thickness of resist less than 20 nm can obtain 5-nm size dot pattern at the range of critial energy of 6.25 keV/cm3-56.25 keV/cm3. The simulation of resist development profile indicates that dot size of 3 nm can even be obtained at a higher critical energy density at 156.25 keV/ cm3. Furthermore, Calixarene resist is more suitable than PMMA positive resist by comparison of these two resists
VL  - 1
IS  - 1
ER  -

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Author Information

Hui Zhang

Advanced Technology Research Center, Gunma University, Japan
Yulong Zhang

Graduate School of Engineering, Gunma, Japan
Sumio Hosaka

Graduate School of Engineering, Gunma, Japan
You Yin

Graduate School of Engineering, Gunma, Japan

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Plain Text BibTeX RIS

APA Style

Hui Zhang, Yulong Zhang, Sumio Hosaka, You Yin. (2013). Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.. American Journal of Nano Research and Applications, 1(1), 11-16. https://doi.org/10.11648/j.nano.20130101.13

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ACS Style

Hui Zhang; Yulong Zhang; Sumio Hosaka; You Yin. Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.. Am. J. Nano Res. Appl. 2013, 1(1), 11-16. doi: 10.11648/j.nano.20130101.13

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AMA Style

Hui Zhang, Yulong Zhang, Sumio Hosaka, You Yin. Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.. Am J Nano Res Appl. 2013;1(1):11-16. doi: 10.11648/j.nano.20130101.13

Copy | Download

@article{10.11648/j.nano.20130101.13,
  author = {Hui Zhang and Yulong Zhang and Sumio Hosaka and You Yin},
  title = {Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.},
  journal = {American Journal of Nano Research and Applications},
  volume = {1},
  number = {1},
  pages = {11-16},
  doi = {10.11648/j.nano.20130101.13},
  url = {https://doi.org/10.11648/j.nano.20130101.13},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.20130101.13},
  abstract = {We have calculated the electron energy deposition distribution in Calixarene negative resist and analyzed the development profile in order to improve the resolution of pattern. From the trajectories and energy deposition distribution in resist at various beam diameters, it is obvious that the thinner resist film should be adopted for formation of very fine dots. The analysis of relationship between the thickness of resist and dot diameter based on the critical energy densities shows that the thickness of resist less than 20 nm can obtain 5-nm size dot pattern at the range of critial energy of 6.25 keV/cm3-56.25 keV/cm3. The simulation of resist development profile indicates that dot size of 3 nm can even be obtained at a higher critical energy density at 156.25 keV/ cm3. Furthermore, Calixarene resist is more suitable than PMMA positive resist by comparison of these two resists},
 year = {2013}
}

Copy | Download

TY  - JOUR
T1  - Dependence of Electron Beam Diameter, Electron Energy, Resist Thickness and Resist Type for Forming Nano-sized Dot Arrays in EB Lithography by Using Monte Carlo Simulation.
AU  - Hui Zhang
AU  - Yulong Zhang
AU  - Sumio Hosaka
AU  - You Yin
Y1  - 2013/05/30
PY  - 2013
N1  - https://doi.org/10.11648/j.nano.20130101.13
DO  - 10.11648/j.nano.20130101.13
T2  - American Journal of Nano Research and Applications
JF  - American Journal of Nano Research and Applications
JO  - American Journal of Nano Research and Applications
SP  - 11
EP  - 16
PB  - Science Publishing Group
SN  - 2575-3738
UR  - https://doi.org/10.11648/j.nano.20130101.13
AB  - We have calculated the electron energy deposition distribution in Calixarene negative resist and analyzed the development profile in order to improve the resolution of pattern. From the trajectories and energy deposition distribution in resist at various beam diameters, it is obvious that the thinner resist film should be adopted for formation of very fine dots. The analysis of relationship between the thickness of resist and dot diameter based on the critical energy densities shows that the thickness of resist less than 20 nm can obtain 5-nm size dot pattern at the range of critial energy of 6.25 keV/cm3-56.25 keV/cm3. The simulation of resist development profile indicates that dot size of 3 nm can even be obtained at a higher critical energy density at 156.25 keV/ cm3. Furthermore, Calixarene resist is more suitable than PMMA positive resist by comparison of these two resists
VL  - 1
IS  - 1
ER  -

Copy | Download