Fabrication and characterization of ZnO nanostructures on Si(111) substrate using a thin AlN buffer layer

L.S. Chuah; Z. Hassan; S. K. Mohd Bakhori; M. A. Ahmad; Y. Yusof

doi:doi:10.11648/j.nano.2013.0101.11

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Fabrication and characterization of ZnO nanostructures on Si(111) substrate using a thin AlN buffer layer

L.S. Chuah, Z. Hassan, S. K. Mohd Bakhori, M. A. Ahmad, Y. Yusof

Published in American Journal of Nanoscience and Nanotechnology (Volume 1, Issue 1)

Received: 4 April 2013 Published: 20 May 2013

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Abstract

In the present work, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow AlN thin layers on Si(111) substrate. Subsequently, the thermal evaporation technique was used to deposit the zinc films on Si(111) substrates with AlN as buffer layer. ZnO nanostructures were obtained from zinc granulated (99.99%) by thermal oxidation from 400 °C to 600 °C in air for 1 hours without any catalysts. The effect of annealing temperatures were studied ranging from 400 °C to 600 °C in air for 1 hours. The AlN was introduced to accommodate the lattice mismatch and thermal expansion mismatch between ZnO layer and Si substrate. The structural and optical properties of ZnO nanostructures are studied through scanning electron microscopy (SEM), X-ray diffraction (XRD) and room temperature photoluminescence (PL) spectroscopy. The films show a polycrystalline hexagonal wurtzite structure without preferred (0002) orientation. The mean grain sizes are calculated to be about 18 nm, 22 nm and 50 nm for the ZnO films prepared at temperatures of 400 °C, 500 °C and 600 °C. The structure of the fabricated nanomaterials were characterized by scanning electron microscopy (SEM). The PL spectra of the ZnO nanostructures having a sharp excitonic ultraviolet (UV) emission and very weak defect-related deep level visible emissions. It is showed that the ZnO nanostructures thermal annealed treatment was performed at 600 °C shows the strongest UV emission intensity among the temperatures ranges studied. In addition, from the one-dimensional ZnO nanostructures thermal annealed at 600 °C, the stronger UV emission is assigned to the best crystalline quality of the ZnO film

Published in	American Journal of Nanoscience and Nanotechnology (Volume 1, Issue 1)
DOI	10.11648/j.nano.2013.0101.11
Page(s)	1-5
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2013. Published by Science Publishing Group

Keywords

Nanostructures; ZnO, AlN; Si, Thermal evaporation, SEM, XRD, PL

References

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APA Style

L.S. Chuah, Z. Hassan, S. K. Mohd Bakhori, M. A. Ahmad, Y. Yusof. (2013). Fabrication and characterization of ZnO nanostructures on Si(111) substrate using a thin AlN buffer layer. American Journal of Nano Research and Applications, 1(1), 1-5. https://doi.org/10.11648/j.nano.2013.0101.11

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ACS Style

L.S. Chuah; Z. Hassan; S. K. Mohd Bakhori; M. A. Ahmad; Y. Yusof. Fabrication and characterization of ZnO nanostructures on Si(111) substrate using a thin AlN buffer layer. Am. J. Nano Res. Appl. 2013, 1(1), 1-5. doi: 10.11648/j.nano.2013.0101.11

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AMA Style

L.S. Chuah, Z. Hassan, S. K. Mohd Bakhori, M. A. Ahmad, Y. Yusof. Fabrication and characterization of ZnO nanostructures on Si(111) substrate using a thin AlN buffer layer. Am J Nano Res Appl. 2013;1(1):1-5. doi: 10.11648/j.nano.2013.0101.11

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@article{10.11648/j.nano.2013.0101.11,
  author = {L.S. Chuah and Z. Hassan and S. K. Mohd Bakhori and M. A. Ahmad and Y. Yusof},
  title = {Fabrication and characterization of ZnO nanostructures on Si(111) substrate using a thin AlN buffer layer},
  journal = {American Journal of Nano Research and Applications},
  volume = {1},
  number = {1},
  pages = {1-5},
  doi = {10.11648/j.nano.2013.0101.11},
  url = {https://doi.org/10.11648/j.nano.2013.0101.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.2013.0101.11},
  abstract = {In the present work, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow AlN thin layers on Si(111) substrate. Subsequently, the thermal evaporation technique was used to deposit the zinc films on Si(111) substrates with AlN as buffer layer. ZnO nanostructures were obtained from zinc granulated (99.99%) by thermal oxidation from 400 °C to 600 °C in air for 1 hours without any catalysts. The effect of annealing temperatures were studied ranging from 400 °C to 600 °C in air for 1 hours. The AlN was introduced to accommodate the lattice mismatch and thermal expansion mismatch between ZnO layer and Si substrate. The structural and optical properties of ZnO nanostructures are studied through scanning electron microscopy (SEM), X-ray diffraction (XRD) and room temperature photoluminescence (PL) spectroscopy. The films show a polycrystalline hexagonal wurtzite structure without preferred (0002) orientation. The mean grain sizes are calculated to be about 18 nm, 22 nm and 50 nm for the ZnO films prepared at temperatures of 400 °C, 500 °C and 600 °C. The structure of the fabricated nanomaterials were characterized by scanning electron microscopy (SEM). The PL spectra of the ZnO nanostructures having a sharp excitonic ultraviolet (UV) emission and very weak defect-related deep level visible emissions. It is showed that the ZnO nanostructures thermal annealed treatment was performed at 600 °C shows the strongest UV emission intensity among the temperatures ranges studied. In addition, from the one-dimensional ZnO nanostructures thermal annealed at 600 °C, the stronger UV emission is assigned to the best crystalline quality of the ZnO film},
 year = {2013}
}

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TY - JOUR
T1 - Fabrication and characterization of ZnO nanostructures on Si(111) substrate using a thin AlN buffer layer
AU - L.S. Chuah
AU - Z. Hassan
AU - S. K. Mohd Bakhori
AU - M. A. Ahmad
AU - Y. Yusof
Y1 - 2013/05/20
PY - 2013
N1 - https://doi.org/10.11648/j.nano.2013.0101.11
DO - 10.11648/j.nano.2013.0101.11
T2 - American Journal of Nano Research and Applications
JF - American Journal of Nano Research and Applications
JO - American Journal of Nano Research and Applications
SP - 1
EP - 5
PB - Science Publishing Group
SN - 2575-3738
UR - https://doi.org/10.11648/j.nano.2013.0101.11
AB - In the present work, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow AlN thin layers on Si(111) substrate. Subsequently, the thermal evaporation technique was used to deposit the zinc films on Si(111) substrates with AlN as buffer layer. ZnO nanostructures were obtained from zinc granulated (99.99%) by thermal oxidation from 400 °C to 600 °C in air for 1 hours without any catalysts. The effect of annealing temperatures were studied ranging from 400 °C to 600 °C in air for 1 hours. The AlN was introduced to accommodate the lattice mismatch and thermal expansion mismatch between ZnO layer and Si substrate. The structural and optical properties of ZnO nanostructures are studied through scanning electron microscopy (SEM), X-ray diffraction (XRD) and room temperature photoluminescence (PL) spectroscopy. The films show a polycrystalline hexagonal wurtzite structure without preferred (0002) orientation. The mean grain sizes are calculated to be about 18 nm, 22 nm and 50 nm for the ZnO films prepared at temperatures of 400 °C, 500 °C and 600 °C. The structure of the fabricated nanomaterials were characterized by scanning electron microscopy (SEM). The PL spectra of the ZnO nanostructures having a sharp excitonic ultraviolet (UV) emission and very weak defect-related deep level visible emissions. It is showed that the ZnO nanostructures thermal annealed treatment was performed at 600 °C shows the strongest UV emission intensity among the temperatures ranges studied. In addition, from the one-dimensional ZnO nanostructures thermal annealed at 600 °C, the stronger UV emission is assigned to the best crystalline quality of the ZnO film
VL - 1
IS - 1
ER -

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Author Information

L.S. Chuah

Physics Section, School of Distance Education, Universiti Sains Malaysia, 11800 Penang, Malaysia
Z. Hassan

In the present work, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow AlN thin layers on Si(111) substrate. Subsequently, the thermal evaporation technique was used to deposit the zinc films on Si(111) substrates with AlN as buffer layer. ZnO nanostructures were obtained from zinc granulated (99.99%) by thermal oxidation from 400 °C to 600 °C in air for 1 hours without any catalysts. The effect of annealing temperatures were studied ranging from 400 °C
S. K. Mohd Bakhori

In the present work, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow AlN thin layers on Si(111) substrate. Subsequently, the thermal evaporation technique was used to deposit the zinc films on Si(111) substrates with AlN as buffer layer. ZnO nanostructures were obtained from zinc granulated (99.99%) by thermal oxidation from 400 °C to 600 °C in air for 1 hours without any catalysts. The effect of annealing temperatures were studied ranging from 400 °C
M. A. Ahmad

In the present work, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow AlN thin layers on Si(111) substrate. Subsequently, the thermal evaporation technique was used to deposit the zinc films on Si(111) substrates with AlN as buffer layer. ZnO nanostructures were obtained from zinc granulated (99.99%) by thermal oxidation from 400 °C to 600 °C in air for 1 hours without any catalysts. The effect of annealing temperatures were studied ranging from 400 °C
Y. Yusof

In the present work, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow AlN thin layers on Si(111) substrate. Subsequently, the thermal evaporation technique was used to deposit the zinc films on Si(111) substrates with AlN as buffer layer. ZnO nanostructures were obtained from zinc granulated (99.99%) by thermal oxidation from 400 °C to 600 °C in air for 1 hours without any catalysts. The effect of annealing temperatures were studied ranging from 400 °C

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APA Style

L.S. Chuah, Z. Hassan, S. K. Mohd Bakhori, M. A. Ahmad, Y. Yusof. (2013). Fabrication and characterization of ZnO nanostructures on Si(111) substrate using a thin AlN buffer layer. American Journal of Nano Research and Applications, 1(1), 1-5. https://doi.org/10.11648/j.nano.2013.0101.11

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ACS Style

L.S. Chuah; Z. Hassan; S. K. Mohd Bakhori; M. A. Ahmad; Y. Yusof. Fabrication and characterization of ZnO nanostructures on Si(111) substrate using a thin AlN buffer layer. Am. J. Nano Res. Appl. 2013, 1(1), 1-5. doi: 10.11648/j.nano.2013.0101.11

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AMA Style

L.S. Chuah, Z. Hassan, S. K. Mohd Bakhori, M. A. Ahmad, Y. Yusof. Fabrication and characterization of ZnO nanostructures on Si(111) substrate using a thin AlN buffer layer. Am J Nano Res Appl. 2013;1(1):1-5. doi: 10.11648/j.nano.2013.0101.11

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@article{10.11648/j.nano.2013.0101.11,
  author = {L.S. Chuah and Z. Hassan and S. K. Mohd Bakhori and M. A. Ahmad and Y. Yusof},
  title = {Fabrication and characterization of ZnO nanostructures on Si(111) substrate using a thin AlN buffer layer},
  journal = {American Journal of Nano Research and Applications},
  volume = {1},
  number = {1},
  pages = {1-5},
  doi = {10.11648/j.nano.2013.0101.11},
  url = {https://doi.org/10.11648/j.nano.2013.0101.11},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.nano.2013.0101.11},
  abstract = {In the present work, radio-frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (PA-MBE) technique was used to grow AlN thin layers on Si(111) substrate. Subsequently, the thermal evaporation technique was used to deposit the zinc films on Si(111) substrates with AlN as buffer layer. ZnO nanostructures were obtained from zinc granulated (99.99%) by thermal oxidation from 400 °C to 600 °C in air for 1 hours without any catalysts. The effect of annealing temperatures were studied ranging from 400 °C to 600 °C in air for 1 hours. The AlN was introduced to accommodate the lattice mismatch and thermal expansion mismatch between ZnO layer and Si substrate. The structural and optical properties of ZnO nanostructures are studied through scanning electron microscopy (SEM), X-ray diffraction (XRD) and room temperature photoluminescence (PL) spectroscopy. The films show a polycrystalline hexagonal wurtzite structure without preferred (0002) orientation. The mean grain sizes are calculated to be about 18 nm, 22 nm and 50 nm for the ZnO films prepared at temperatures of 400 °C, 500 °C and 600 °C. The structure of the fabricated nanomaterials were characterized by scanning electron microscopy (SEM). The PL spectra of the ZnO nanostructures having a sharp excitonic ultraviolet (UV) emission and very weak defect-related deep level visible emissions. It is showed that the ZnO nanostructures thermal annealed treatment was performed at 600 °C shows the strongest UV emission intensity among the temperatures ranges studied. In addition, from the one-dimensional ZnO nanostructures thermal annealed at 600 °C, the stronger UV emission is assigned to the best crystalline quality of the ZnO film},
 year = {2013}
}

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