High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3

Dohyung Kim; Heesub Lee; Yoshiki Naoi; Shiro Sakai

doi:doi:10.11648/j.ijmsa.20140305.18

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High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3

Dohyung Kim, Heesub Lee, Yoshiki Naoi, Shiro Sakai

Published in International Journal of Materials Science and Applications (Volume 3, Issue 5)

Received: 17 August 2014 Accepted: 6 September 2014 Published: 20 September 2014

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Abstract

The diffusion experiment of AlxGa1-xN (x = 0.00, 0.04, 0.45, 0.65, 0.86, 1.00) samples using a solid source of Al4C3 layer was performed by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The AlxGa1-xN (x≦0.45) samples were proven to be a p-type. In second ion mass spectroscopy (SIMS) analysis, the carbon profile is different from the simple complementary error function, but is the double of the complementary error function, meaning AlC or AlCO plus C. The diffusion length (L) was drastically decreased by increasing Al. The diffusion coefficient (D) was also calculated as a function of Al mole fraction.

Published in	International Journal of Materials Science and Applications (Volume 3, Issue 5)
DOI	10.11648/j.ijmsa.20140305.18
Page(s)	177-182
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2014. Published by Science Publishing Group

Keywords

AlGaN Diffusion, MOVPE, Al4C3, High Temperature

References

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APA Style

Dohyung Kim, Heesub Lee, Yoshiki Naoi, Shiro Sakai. (2014). High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3. International Journal of Materials Science and Applications, 3(5), 177-182. https://doi.org/10.11648/j.ijmsa.20140305.18

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ACS Style

Dohyung Kim; Heesub Lee; Yoshiki Naoi; Shiro Sakai. High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3. Int. J. Mater. Sci. Appl. 2014, 3(5), 177-182. doi: 10.11648/j.ijmsa.20140305.18

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AMA Style

Dohyung Kim, Heesub Lee, Yoshiki Naoi, Shiro Sakai. High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3. Int J Mater Sci Appl. 2014;3(5):177-182. doi: 10.11648/j.ijmsa.20140305.18

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@article{10.11648/j.ijmsa.20140305.18,
  author = {Dohyung Kim and Heesub Lee and Yoshiki Naoi and Shiro Sakai},
  title = {High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3},
  journal = {International Journal of Materials Science and Applications},
  volume = {3},
  number = {5},
  pages = {177-182},
  doi = {10.11648/j.ijmsa.20140305.18},
  url = {https://doi.org/10.11648/j.ijmsa.20140305.18},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140305.18},
  abstract = {The diffusion experiment of AlxGa1-xN (x = 0.00, 0.04, 0.45, 0.65, 0.86, 1.00) samples using a solid source of Al4C3 layer was performed by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The AlxGa1-xN (x≦0.45) samples were proven to be a p-type. In second ion mass spectroscopy (SIMS) analysis, the carbon profile is different from the simple complementary error function, but is the double of the complementary error function, meaning AlC or AlCO plus C. The diffusion length (L) was drastically decreased by increasing Al. The diffusion coefficient (D) was also calculated as a function of Al mole fraction.},
 year = {2014}
}

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TY  - JOUR
T1  - High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3
AU  - Dohyung Kim
AU  - Heesub Lee
AU  - Yoshiki Naoi
AU  - Shiro Sakai
Y1  - 2014/09/20
PY  - 2014
N1  - https://doi.org/10.11648/j.ijmsa.20140305.18
DO  - 10.11648/j.ijmsa.20140305.18
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 177
EP  - 182
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20140305.18
AB  - The diffusion experiment of AlxGa1-xN (x = 0.00, 0.04, 0.45, 0.65, 0.86, 1.00) samples using a solid source of Al4C3 layer was performed by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The AlxGa1-xN (x≦0.45) samples were proven to be a p-type. In second ion mass spectroscopy (SIMS) analysis, the carbon profile is different from the simple complementary error function, but is the double of the complementary error function, meaning AlC or AlCO plus C. The diffusion length (L) was drastically decreased by increasing Al. The diffusion coefficient (D) was also calculated as a function of Al mole fraction.
VL  - 3
IS  - 5
ER  -

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Author Information

Dohyung Kim

Graduate School of Advanced Technology and Science, Tokushima University, Tokushima, Japan
Heesub Lee

Epitaxy Research Team, Seoul Viosys corporation, Kyunggi-do, Republic of Korea
Yoshiki Naoi

Institutes of Technology and Science, Tokushima University, Tokushima, Japan
Shiro Sakai

Institutes of Technology and Science, Tokushima University, Tokushima, Japan

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Plain Text BibTeX RIS

APA Style

Dohyung Kim, Heesub Lee, Yoshiki Naoi, Shiro Sakai. (2014). High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3. International Journal of Materials Science and Applications, 3(5), 177-182. https://doi.org/10.11648/j.ijmsa.20140305.18

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ACS Style

Dohyung Kim; Heesub Lee; Yoshiki Naoi; Shiro Sakai. High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3. Int. J. Mater. Sci. Appl. 2014, 3(5), 177-182. doi: 10.11648/j.ijmsa.20140305.18

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AMA Style

Dohyung Kim, Heesub Lee, Yoshiki Naoi, Shiro Sakai. High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3. Int J Mater Sci Appl. 2014;3(5):177-182. doi: 10.11648/j.ijmsa.20140305.18

Copy | Download

@article{10.11648/j.ijmsa.20140305.18,
  author = {Dohyung Kim and Heesub Lee and Yoshiki Naoi and Shiro Sakai},
  title = {High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3},
  journal = {International Journal of Materials Science and Applications},
  volume = {3},
  number = {5},
  pages = {177-182},
  doi = {10.11648/j.ijmsa.20140305.18},
  url = {https://doi.org/10.11648/j.ijmsa.20140305.18},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.ijmsa.20140305.18},
  abstract = {The diffusion experiment of AlxGa1-xN (x = 0.00, 0.04, 0.45, 0.65, 0.86, 1.00) samples using a solid source of Al4C3 layer was performed by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The AlxGa1-xN (x≦0.45) samples were proven to be a p-type. In second ion mass spectroscopy (SIMS) analysis, the carbon profile is different from the simple complementary error function, but is the double of the complementary error function, meaning AlC or AlCO plus C. The diffusion length (L) was drastically decreased by increasing Al. The diffusion coefficient (D) was also calculated as a function of Al mole fraction.},
 year = {2014}
}

Copy | Download

TY  - JOUR
T1  - High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3
AU  - Dohyung Kim
AU  - Heesub Lee
AU  - Yoshiki Naoi
AU  - Shiro Sakai
Y1  - 2014/09/20
PY  - 2014
N1  - https://doi.org/10.11648/j.ijmsa.20140305.18
DO  - 10.11648/j.ijmsa.20140305.18
T2  - International Journal of Materials Science and Applications
JF  - International Journal of Materials Science and Applications
JO  - International Journal of Materials Science and Applications
SP  - 177
EP  - 182
PB  - Science Publishing Group
SN  - 2327-2643
UR  - https://doi.org/10.11648/j.ijmsa.20140305.18
AB  - The diffusion experiment of AlxGa1-xN (x = 0.00, 0.04, 0.45, 0.65, 0.86, 1.00) samples using a solid source of Al4C3 layer was performed by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The AlxGa1-xN (x≦0.45) samples were proven to be a p-type. In second ion mass spectroscopy (SIMS) analysis, the carbon profile is different from the simple complementary error function, but is the double of the complementary error function, meaning AlC or AlCO plus C. The diffusion length (L) was drastically decreased by increasing Al. The diffusion coefficient (D) was also calculated as a function of Al mole fraction.
VL  - 3
IS  - 5
ER  -

Copy | Download